cris.boxmetadata.label.title
Determination of the electronic band structure for a graded modulation-doped AlGaNAlNGaN superlattice
cris.boxmetadata.label.dateissued
11 browse.startsWith.months.october 2007
cris.boxmetadata.label.accesslevel
metadata only access
cris.boxmetadata.label.resourcetype
journal article
cris.boxmetadata.label.authors
cris.boxmetadata.label.abstract
The electronic band structure of a modulation-doped AlGaNAlNGaN superlattice structure where the AlGaN layer is compositionally graded has been experimentally determined by electron holography. It is shown that all periods in the superlattice have a similar two-dimensional-electron-gas distribution, indicating no degradation in the quality of the heterostructures during growth. High-resolution potential energy profiles show that the nominally linear grading of the AlGaN barrier layers results in a parabolic profile in Al composition. Knowledge of the nature of energy barriers for electron transfer between channels is important in the optimization of the perpendicular conductivity of AlGaNGaN superlattice structures. © 2007 American Institute of Physics.
cris.boxmetadata.label.volume
91
cris.boxmetadata.label.issue
14
cris.boxmetadata.label.language
English
cris.boxmetadata.label.ocdeknowledgeArea
Física de partículas, Campos de la Física
cris.boxmetadata.label.doi
cris.boxmetadata.label.scopusidentifier
2-s2.0-34948839553
cris.boxmetadata.label.source
Applied Physics Letters
cris.boxmetadata.label.containerissn
00036951
cris.boxmetadata.label.sponsor
Research at Ulm University was sponsored by a grant from OSRAM Opto Semiconductors (Regensburg) within a project funded by the German Federal Ministry of Education and Research.
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