Title
Observation of PbI 2 Residuals after P2 Nanosecond Laser Ablation of Perovskite Absorber Layers
Date Issued
26 November 2018
Access level
metadata only access
Resource Type
conference paper
Author(s)
Schultz C.
Schneider F.
Neubauer A.
Bartelt A.
Jost M.
Schlatmann R.
Albrecht S.
Stegemann B.
Institute for Silicon Photovoltaics
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
P2 laser patterning of the perovskite layer for serial monolithic integration was systematically investigated by laser ablation using nanosecond laser pulses at varied laser fluences. The correlation of the laser impact to the morphology, composition and electrical functionality was analyzed in detail by several surface-analytical techniques. It is found that material removal via stress-assisted ablation is strongly influenced by thermal processes. The formation of PbI 2 containing residuals was evidenced, presumably causing contact resistance losses through the P2 interconnect. From these results loss factors in laser-based serial interconnection of perovskite solar cells were identified, allowing for process optimization for upscaling to industrial module sizes.
Start page
2812
End page
2815
Number
8547456
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-85059897028
ISBN of the container
978-153868529-7
Conference
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Sources of information:
Directorio de Producción Científica
Scopus