Title
Dots-in-a-well InGaAs based laser probed by photoreflectance-anisotropy spectroscopy
Date Issued
01 January 2009
Access level
metadata only access
Resource Type
conference paper
Author(s)
Balderas-Navarro R.
Lara-Velázquez I.
Ortega-Gallegos J.
Díaz De León-Zapata R.
Lastras-Martínez L.
Lastras-Martínez A.
Universidad Autónoma de San Luis Potosí
Abstract
We have used photoreflectance-anisotropy (PRA) spectroscopy as an optical probe for the characterization of heterostructure lasers with an active region consisting of InAs quantum dots (QDs) embedded in a series of three stacked In0.15Ga0.85As quantum wells (QWs). By probing the in-plane optical anisotropy, we demonstrate that PRA spectroscopy has the ability to detect and differentiate layers with quantum dimensions, as the anisotropy PRA signal stems from QWs and QDs. We show that PRA spectroscopy can be an attractive tool for the characterization of buried interfaces in nanostructured devices at room temperature.
Start page
8
End page
11
Number
5422872
Language
English
OCDE Knowledge area
Física de la materia condensada
Nano-materiales
Scopus EID
2-s2.0-77951125522
Resource of which it is part
IEEExPO 2009 - 3rd Conference of University of Guanajuato IEEE Students Chapter
ISBN of the container
978-142446029-8
Conference
3rd Conference of University of Guanajuato IEEE Students Chapter, IEEExPO 2009
Sources of information:
Directorio de Producción Científica
Scopus