Based on the ability of plane structures to simultaneously optimize the propagation, confinement, and energy of surface plasmon-polaritons or surface phonon-polaritons, we develop the polaritonic figure of merit Z = βRΛ2/δ, where βR, Λ and δ are the longitudinal wave vector, propagation length, and penetration depth, respectively. Explicit and analytical expressions of Z are derived for a single interface and a suspended thin film, as functions of the material permittivities and the film thickness. Higher Z are obtained for thinner films and smaller energy losses. The application of the obtained results for a SiC-air interface and a SiC thin film suspended in air shows that both structures are able to maximize the presence of polaritons at a frequency near to, but di erent than that at which the real part of the SiC permittivity exhibits a dip. Furthermore, using the temperature change of this dip, we show that the propagation length, confinement and energy of polaritons increases with its deepness, which provides an e ective way to enhance the overall Z of polaritonic structures.