Title
High-sensitivity split-contact magnetoresistors on lightly doped silicon substrates
Date Issued
01 January 2014
Access level
metadata only access
Resource Type
conference paper
Author(s)
Galup-Montoro C.
Publisher(s)
IEEE Computer Society
Abstract
In this paper we show that silicon split-contact magnetoresistors with geometric dimensions of the order of the Debye length (LD) can have much higher sensitivities than the usual devices with much larger length and width than LD. Numerical simulations carried out with Comsol Multiphysics show that silicon n-type magnetoresistors with dimensions of the order of LD can have magnetic sensitivity as high as 60%/T which is ten times higher than usual sensitivities. © 2014 IEEE.
Language
English
OCDE Knowledge area
Ingeniería de sistemas y comunicaciones
Scopus EID
2-s2.0-84904568007
ISBN of the container
978-147992507-0
Conference
2014 IEEE 5th Latin American Symposium on Circuits and Systems, LASCAS 2014 - Conference Proceedings
Sources of information:
Directorio de Producción Científica
Scopus