Title
Control of hydrogen for the improvement of optical properties of Ga(In)NAs Epilayers grown on GaAs
Date Issued
30 November 2005
Access level
metadata only access
Resource Type
conference paper
Author(s)
University of Houston
Publisher(s)
Institute of Electrical and Electronics Engineers - IEEE
Abstract
In this work we have undertaken a systematic study of the influence of growth parameters and post growth rapid thermal annealing upon the optimization of optical properties of InGaAsN lattice matched and GaAsN metamorphic epilayers with room temperature bandgaps ranging from 1-1.3 eV. Epilayers were grown by chemical beam epitaxy on (001) GaAs substrates using a radio-frequency (RF) plasma source. A special emphasis is given to decipher the role of atomic hydrogen (generated during the growth process) upon structural properties and optical quality of Ga(In)NAs epilayers. Finally the optimization of H*/N* ratio yielded high quality quantum well material as attested by the unusually strong IR photoresponse of GaAsN/GaAs QW solar cells. ©2005 IEEE.
Start page
687
End page
690
Language
English
OCDE Knowledge area
Bioproductos (productos que se manufacturan usando biotecnología), biomateriales, bioplásticos, biocombustibles, materiales nuevos bioderivados, químicos finos bioredivados
Ingeniería química
Scopus EID
2-s2.0-27944476054
Source
Conference Record of the IEEE Photovoltaic Specialists Conference
Resource of which it is part
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
ISSN of the container
01608371
ISBN of the container
0780387074
Conference
31st IEEE Photovoltaic Specialists Conference - 2005 3 January 2005 through 7 January 2005
Sources of information:
Directorio de Producción Científica
Scopus