In this paper we present microcrystalline silicon (μc-Si: H) p-i-n solar cells prepared at high deposition rates using plasma-enhanced chemical vapour deposition (PECVD) at 13.56 MHz excitation frequency. We studied the deposition regime of high RF-power PRF (40-100 W for a 150 cm2 electrode) and high deposition pressure pdep(1-11 Torr) at different silane concentrations and substrate temperatures. In this regime the prepared ilayers were amorphous or microcrystalline depending on the deposition parameters. The shift between the two growth regimes was achieved by a variation of either deposition pressure, plasma power or silane concentration. The best uc-Si:H solar cells were prepared close to the transition to amorphous growth. A high deposition pressure was a prerequisite for obtaining high quality material at a high growth rate. The best solar cell efficiency achieved was 8.0 % at 5 Å/s for a uc-Si: H single junction solar cell.