Title
AFM investigation of interface step structures on PVT-grown (0 0 0 1)Si 6H-SiC crystals
Date Issued
15 September 2004
Access level
metadata only access
Resource Type
journal article
Author(s)
University of Erlangen
Publisher(s)
Elsevier
Abstract
An AFM investigation of entire growth surfaces of PVT grown (0001)Si 6H-SiC crystals has revealed a number of typical growth interface structures. While step flow mode was observed within the central faceted area, step bunching, nano-steps and even atomically rough surfaces were observed within the peripheral convex area. The changes in growth mode are attributed to the variation of the undercooling along the growth interface. A correlation between the interface inclination α in respect to the (0001) plane and the corresponding growth mode has been determined for particular growth conditions (temperature, pressure). A non-uniform radial distribution of the charge carrier concentration n originated from uneven dopants incorporation has been investigated. The values of dopants concentration obtained from absorption measurements are correlated to different growth modes. © 2004 Elsevier B.V. All rights reserved.
Start page
113
End page
120
Volume
270
Issue
February 1
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-4444301874
Source
Journal of Crystal Growth
ISSN of the container
00220248
Sponsor(s)
Funding text
This work was supported by the German Ministry of Education and Research (BMBF) under contract No. DLR 01 BM 073. One of the authors (Ziad Herro) would like to thank the “Region Languedoc-Rousillon, Direction de l’Enseignement Supérieur, de la Recherche et des Nouvelles Technologies” for the financial support provided within the frame of an allowance of interregional mobility between France and Germany.
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