Title
Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation
Date Issued
21 July 2016
Access level
open access
Resource Type
journal article
Author(s)
Xie H.
Prioli R.
Fischer A.M.
Kawabata R.M.S.
Pinto L.D.
Jakomin R.
Pires M.P.
Souza P.L.
Publisher(s)
American Institute of Physics Inc.
Abstract
The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.
Volume
120
Issue
3
Language
English
OCDE Knowledge area
Óptica
Scopus EID
2-s2.0-84978952260
Source
Journal of Applied Physics
ISSN of the container
00218979
Sponsor(s)
The research at ASU was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895, and in part by the NSF Materials World Network (DMR-1108450). The material design and growth was partially supported by the Fundacao de Amparo a Pesquisa do Estado de Rio de Janeiro (FAPERJ) and by the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq).
Sources of information:
Directorio de Producción Científica
Scopus