Title
Production and characterization of Tm3+/Yb3+ codoped waveguides based on PbO-GeO2 thin films
Date Issued
01 January 2014
Access level
metadata only access
Resource Type
journal article
Author(s)
De Assumpção T.
Da Silva D.
Del Cacho V.
Kassab L.
Universidad de São Paulo
Abstract
Fabrication and optical characterization of Tm3+/Yb3+ codoped PbO-GeO2 (PGO) pedestal-type waveguides are investigated in this work. It is important to mention that, to the best of authors' knowledge, the use of PGO pedestal-type waveguide has not been studied before. PGO thin films codoped with Tm3+ and Yb3+ were obtained through RF magnetron sputtering technique. The pedestal profile was obtained using conventional optical lithography procedures, followed by plasma etching and sputtering deposition. The profile of Tm3+/Yb3+ codoped PGO waveguides was observed by means of Scanning Electron Microscopy (SEM) measurements. Also the infrared and infrared-to-visible frequency upconversion luminescences of Tm3+ ions were measured exciting the samples with a cw 980 nm diode laser. Propagation losses around 11 dB/cm and 9 dB/cm were obtained at 630 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was observed for waveguides width up to 12 μm and 7 μm, at 1050 nm and 630 nm, respectively; larger waveguides width provided multi-mode propagation. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguide for photonic applications. © 2012 Elsevier B.V. All rights reserved.
Volume
586
Issue
SUPPL. 1
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica Ingeniería de materiales
Scopus EID
2-s2.0-84889084632
Source
Journal of Alloys and Compounds
ISSN of the container
09258388
Sponsor(s)
This work was supported by CNPq (Conselho Nacional de Desenvolvimento Científico e Tecnológico), the National Institute of Photonics (INCT Project- CNPq) and CAPES (Coordenação de Aperfeiçoamento de Pessoal de Nível Superior). The authors also acknowledge A.J. Moreira (Laboratório de Sistemas Integráveis, LSI – EPUSP) for the MEV measurements, V.F. Rodriguez-Esquerre for the numerical simulations (Universidade Federal da Bahia) and A.R.P. dos Santos and T.F. Mori for the litography and plasma etching procedures (Laboratório de Microeletrônica, LME – EPUSP).
Sources of information: Directorio de Producción Científica Scopus