The microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition were discussed. It was observed that the transition between amorphous and microcrystalline growth can be achieved by variation of either deposition pressure, plasma power or silane concentration. The results showed that for μc-Si:H single junction cells, the best solar efficiencies achieved were 8.1% and 6.6% at i-layer growth rates of 5 and 10 Å/s respectively.