Title
Nonlinear device model for GaN and GaAs microwave transistors including memory effects
Date Issued
30 December 2015
Access level
metadata only access
Resource Type
conference paper
Author(s)
Universidade de São Paulo
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory effects. Results of measurements reveal the accuracy of this technique under small-signal and large-signal conditions. The proposed technique can be embedded into other models to improve its capabilities using only one current source in a new large signal equivalent circuit.
Volume
2015-December
Issue
7369094
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica
Telecomunicaciones
Subjects
Scopus EID
2-s2.0-84964497106
Resource of which it is part
SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings
ISBN of the container
978-146739492-5
Conference
SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2015 Porto de Galinhas 3 November 2015 through 6 November 2015
Sponsor(s)
The authors thank Dr. Apolinar Reynoso-Hernandez from CICESE (Mexico) for the measurements on the CREE device. This project has been developed under the Fincyt project PIAP-3-P-801-14 in collaboration with INICTEL-UNI, Perú.
Sources of information:
Directorio de Producción Científica
Scopus