Complimentary metal-oxide-semiconductor (CMOS) transistors with polycrystalline Si (poly-Si)/SiGe as the gate material are presented. The SiGe integration using a local CMOS process was developed. It uses a single n +-doped poly-Si0:7Ge0.3- gate instead of single n +- or double-doped poly-Si gate. After deposition, both the poly-Si and SiGe films used as gate layers were doped with phosphorus ions. The threshold, subthreshold, and low-frequency 1=f noises of poly-Si/SiGe CMOS transistors are reported. Improvements in the performance of the poly-Si/SiGe CMOStransistor compared with the poly-Si gate CMOS transistor are presented, indicating that the presence of Ge in the gate material is beneficial, which agrees with results reported in the literature. The n-channel metal-oxide-semiconductor (n-MOS) transistor characteristics in the diode mode (VGS=VDS) are shown, followed by transconductance (G m) results. Improvements in the current-voltage (I-V) characteristics are observed when poly-Si/SiGe CMOS transistors are compared with poly-Si gate CMOS transistors. Another key point is the low-frequency 1=f noise characteristic, which makes the latter transistors promising devices for RF applications. © 2010 The Japan Society of Applied Physics.