Title
Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
Date Issued
22 March 2001
Access level
metadata only access
Resource Type
journal article
Author(s)
University of Erlangen
Publisher(s)
Elsevier BV
Abstract
A non-destructive, absorption measurement based optical method has been developed in order to determine doping type (n- or p-type), doping level and doping level distribution in 4H and 6H silicon carbide (SiC) wafers. The bandgap absorption has been calculated numerically taking into account band filling, band shrinkage and band tailing effects which are a function of donor and acceptor concentration ND and NA, respectively. The numerical results are compared with experimental data. A calibration plot of the doping dependence of the absorption of n-type 6H SiC is presented and the application for mapping of the SiC wafer doping level distribution is demonstrated. © 2001 Elsevier Science B.V.
Start page
352
End page
356
Volume
80
Issue
March 1
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-0035932244
Source
Materials Science and Engineering: B
ISSN of the container
09215107
Sponsor(s)
Funding text
The authors would like to gratefully acknowledge fruitful discussions with Prof. A. Winnacker (Materials Department 6, University of Erlangen, Germany). This work has been supported by the Deutsche Forschungsgemeinschaft (project Wi393/9)
Sources of information:
Directorio de Producción Científica
Scopus