Title
Field effect and localization in InGaN/GaN quantum wells
Date Issued
01 January 2003
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In0.13Ga0.87N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.
Start page
6
End page
7
Volume
2003-January
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Subjects
Scopus EID
2-s2.0-84943563352
ISBN of the container
0780378202
Conference
IEEE International Symposium on Compound Semiconductors, Proceedings
Sources of information:
Directorio de Producción Científica
Scopus