Title
Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
Date Issued
25 February 2019
Access level
open access
Resource Type
journal article
Author(s)
Publisher(s)
American Institute of Physics Inc.
Abstract
A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. This observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.
Volume
114
Issue
8
Language
English
OCDE Knowledge area
Electroquímica
Scopus EID
2-s2.0-85062290436
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
This work was supported by the ARPA-E PNDIODES Program monitored by Dr. Isik Kizilyalli. We acknowledge the use of facilities within the Eyring Materials Center at Arizona State University. The device fabrication was performed at the Center for Solid State Electronics Research at Arizona State University. Access to the NanoFab was supported, in part, by NSF Contract No. ECCS-1542160.
Sources of information:
Directorio de Producción Científica
Scopus