Title
High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings
Date Issued
01 January 2020
Access level
metadata only access
Resource Type
journal article
Author(s)
Fu H.
Montes J.
Deng X.
Qi X.
Goodnick S.M.
Zhao Y.
Fu K.
Alugubelli S.R.
Cheng C.Y.
Huang X.
Chen H.
Yang T.H.
Yang C.
Zhou J.
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.
Start page
127
End page
130
Volume
41
Issue
1
Language
English
OCDE Knowledge area
Química física
Subjects
Scopus EID
2-s2.0-85077794383
Source
IEEE Electron Device Letters
ISSN of the container
07413106
Sponsor(s)
Manuscript received November 2, 2019; accepted November 14, 2019. Date of publication November 19, 2019; date of current version December 27, 2019. This work was supported by the ARPA-E PNDIODES Program monitored by Dr. I. Kizilyalli. The review of this letter was arranged by Editor D. G. Senesky. (Houqiang Fu and Kai Fu contributed equally to this work.) (Corresponding authors: Houqiang Fu; Yuji Zhao.) H. Fu, K. Fu, C.-Y. Cheng, X. Huang, H. Chen, T.-H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, and Y. Zhao are with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: houqiang@asu.edu; yuji.zhao@asu.edu).
Sources of information:
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