Title
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
Date Issued
20 January 2003
Access level
metadata only access
Resource Type
journal article
Author(s)
Universidad Estatal de Arizona
Abstract
The microstructure and optical properties of AlGaN:Mg grown on patterned substrates were reported. It was suggested that the surface properties of the lateral facet inhibited the formation of these defects. Extended lattice defects present in the materials grown directly on the sapphire substrate were found to inhibit the near-band-edge emission.
Start page
349
End page
351
Volume
82
Issue
3
Language
English
OCDE Knowledge area
Física y Astronomía
Scopus EID
2-s2.0-0037455349
Source
Applied Physics Letters
ISSN of the container
00036951
Sources of information:
Directorio de Producción Científica
Scopus