Title
New drain current model for MESFET/HEMT devices based on pulsed measurements
Date Issued
01 January 2006
Access level
metadata only access
Resource Type
conference paper
Author(s)
University College Dublin
Publisher(s)
IEEE Computer Society
Abstract
In this work, a new ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors. © 2006 EuMA.
Start page
289
End page
291
Language
English
OCDE Knowledge area
Ingeniería mecánica
Ingeniería eléctrica, Ingeniería electrónica
Subjects
Scopus EID
2-s2.0-41549169212
ISBN
9782960055184
Resource of which it is part
Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006
ISBN of the container
978-296005518-4
Conference
1st European Microwave Integrated Circuits Conference, EuMIC 2006
Sources of information:
Directorio de Producción Científica
Scopus