Title
Device level model for trapping effects in GaN and GaAs devices for broadband data communication
Date Issued
18 February 2016
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.
Volume
2
Language
English
OCDE Knowledge area
Ingeniería de sistemas y comunicaciones
Subjects
Scopus EID
2-s2.0-84978959411
ISBN of the container
9781479987658
Conference
Asia-Pacific Microwave Conference Proceedings, APMC
Sources of information:
Directorio de Producción Científica
Scopus