Title
Differences in copper indium selenide films obtained by electron beam and flash evaporation
Date Issued
21 February 2000
Access level
metadata only access
Resource Type
conference paper
Author(s)
Rueda F.
Universidad Autonoma de Madrid
Publisher(s)
Elsevier Sequoia SA
Abstract
Two alternative crystal structures have been identified in evaporated films grown from synthesized CuInSe2. The first one, tetragonal CuInSe2 was obtained by `flash' evaporation and the second one, the ordered vacancy compound CuIn2Se3.5 by e-beam evaporation. They had optical gaps of 1.0 for the first and 1.24 eV for the second. The conductivities were p- and n-type, respectively; the last one remained n-type even after annealing in selenium atmospheres. The combination of both films in the heterostructure Mo/CuInSe2/CuIn2Se3.5/CdS/ITO has been obtained and is at present being studied as a solar cell.
Start page
145
End page
149
Volume
361
Language
English
OCDE Knowledge area
Ingeniería de materiales
Scopus EID
2-s2.0-0342323829
Source
Thin Solid Films
ISSN of the container
0040-6090
Conference
The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics 1 June 1999 through 4 June 1999
Sponsor(s)
The financial support of CICYT under project No ESP 056/98 and the measurements and discussions by Dr. I. Montero and Dr. J.L. Martin de Vidales are gratefully acknowledged.
Sources of information:
Directorio de Producción Científica
Scopus