Title
Electrically Tunable Exciton-Plasmon Coupling in a WSe2 Monolayer Embedded in a Plasmonic Crystal Cavity
Date Issued
12 June 2019
Access level
metadata only access
Resource Type
journal article
Author(s)
Dibos A.
Zhou Y.
Scuri G.
Wild D.
High A.
Taniguchi T.
Watanabe K.
Lukin M.
Kim P.
Park H.
Harvard University
Publisher(s)
American Chemical Society
Abstract
We realize a new electroplasmonic switch based upon electrically tunable exciton-plasmon interactions. The device consists of a hexagonal boron nitride (hBN)-encapsulated tungsten diselenide (WSe2) monolayer on top of a single-crystalline silver substrate. The ultrasmooth silver substrate serves a dual role as the medium to support surface plasmon polaritons (SPPs) and the bottom gate electrode to tune the WSe2 exciton energy and brightness through electrostatic doping. To enhance the exciton-plasmon coupling, we implement a plasmonic crystal cavity on top of the hBN/WSe2/hBN/Ag heterostructure with a quality factor reaching 550. The tight confinement of the SPPs in the plasmonic cavity enables strong coupling between excitons and SPPs when the WSe2 exciton absorption is resonant with the cavity mode, leading to a vacuum Rabi splitting of up to 18 meV. This strong coupling can also be switched off with the application of a modest gate voltage that increases the doping density in the monolayer. This demonstration paves the way for new plasmonic modulators and a general device architecture to enhance light-matter interactions between SPPs and various embedded emitters.
Start page
3543
End page
3547
Volume
19
Issue
6
Language
English
OCDE Knowledge area
Ingeniería química Ingeniería eléctrica, Ingeniería electrónica
Scopus EID
2-s2.0-85066409712
PubMed ID
Source
Nano Letters
ISSN of the container
15306984
Sponsor(s)
We acknowledge support from the DoD Vannevar Bush Faculty Fellowship (N00014-16-1-2825 for HP, N00014-18-1-2877 for PK), NSF (PHY-1506284 for HP and MDL), NSF CUA (PHY-1125846 for HP and MDL), AFOSR MURI (FA9550-17-1-0002), ARL (W911NF1520067 for HP and MDL), the Gordon and Betty Moore Foundation (GBMF4543 for PK), ONR MURI (N00014-15-1-2761 for PK), and Samsung Electronics (for PK and HP). The device fabrication was carried out at the Harvard Center for Nanoscale Systems.
Sources of information: Directorio de Producción Científica Scopus