Title
Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States
Date Issued
01 August 2019
Access level
open access
Resource Type
journal article
Author(s)
Wu H.
Xu Y.
Deng P.
Pan Q.
Razavi S.A.
Wong K.
Huang L.
Dai B.
Shao Q.
Yu G.
Han X.
Mangin S.
Wang K.L.
Institut Jean Lamour
Publisher(s)
Wiley-VCH Verlag
Abstract
Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gdx(FeCo)1−x by the topological insulator [Bi2Se3 and (BiSb)2Te3] is investigated at room temperature. The switching current density of (BiSb)2Te3 (1.20 × 105 A cm−2) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gdx(FeCo)1−x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices.
Volume
31
Issue
35
Language
English
OCDE Knowledge area
Astronomía
Ingeniería mecánica
Subjects
Scopus EID
2-s2.0-85068703514
PubMed ID
Source
Advanced Materials
ISSN of the container
09359648
Sponsor(s)
This work was supported by the NSF Award No. 1611570, the Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS), and the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE). The authors are also grateful for the support from the Function Accelerated nanoMaterial Engineering (FAME) Center, and a Semiconductor Research Corporation (SRC) program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA). S.M. acknowledges the French PIA project Lorraine Université d'Excellence, reference ANR-15-IDEX-04-LUE. X.F.H. acknowledges the National Key Research and Development Program of China (Grant No. 2017YFA0206200), and the NSFC of China (Grant No. 11434014).
Sources of information:
Directorio de Producción Científica
Scopus