Title
Dynamic observation of defect annealing in CdTe at lattice resolution
Date Issued
01 January 1982
Access level
metadata only access
Resource Type
journal article
Author(s)
Sinclair R.
Yamashita T.
Smith D.J.
Camps R.A.
Freeman L.A.
Erasmus S.J.
Nixon W.C.
Smith K.C.A.
Catto C.J.D.
Abstract
Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects. © 1982 Nature Publishing Group.
Start page
127
End page
131
Volume
298
Issue
5870
Language
English
OCDE Knowledge area
Física atómica, molecular y química
DOI
Scopus EID
2-s2.0-0019937377
Source
Nature
ISSN of the container
00280836
Sources of information:
Directorio de Producción Científica
Scopus