Title
Analysis and measurement of the non-linear refractive index of SiOx Ny using pedestal waveguides
Date Issued
01 August 2019
Access level
metadata only access
Resource Type
conference paper
Author(s)
Universidad de São Paulo
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
In this work, the non-linear refractive index (n2) of silicon oxynitride (SiOx Ny) is determined, obtaining a value for this material of n2 = 2.11×10-19 m2/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n2 employing the non-linear optical phenomena of Self-Phase Modulation (SPM).
Language
English
OCDE Knowledge area
Telecomunicaciones
Óptica
Subjects
Scopus EID
2-s2.0-85077217233
ISBN of the container
978-172811909-0
Conference
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
Sponsor(s)
ACKNOWLEDGMENT We would like to acknowledge the financial support of Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq, Grant numbers 432088/2018-0 and 305447/2017-3) and Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES, 88882.333330/2019-01 (Migrado – SACPAIS)).
Sources of information:
Directorio de Producción Científica
Scopus