Title
Determination of the optical bandgap of thin amorphous (SiC) 1-x(AlN)x films
Date Issued
01 January 2010
Access level
metadata only access
Resource Type
conference paper
Author(s)
Winterstein A.
Erlenbach O.
Winnacker A.
Publisher(s)
Trans Tech Publications Ltd
Abstract
Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x were grown by radio frequency dual magnetron sputtering on CaF2, MgO and glass substrates. We performed isochronical annealing steps up to 500°C. The optical bandgap is determined for each composition from spectroscopic transmission measurement in two different ways: according to Tauc and using the (ahv)2 plot. The dependence of the optical bandgap on the composition x can be described by Vegard's empirical law for alloys. © (2010) Trans Tech Publications.
Start page
263
End page
266
Volume
645-648
Language
English
OCDE Knowledge area
Óptica
Subjects
Scopus EID
2-s2.0-77955464779
Source
Materials Science Forum
Resource of which it is part
Materials Science Forum
ISSN of the container
02555476
ISBN of the container
0878492798
Conference
13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Sources of information:
Directorio de Producción Científica
Scopus