Title
Mechanism of H <inf>2</inf> pre-annealing on the growth of GaN on sapphire by MOVPE
Date Issued
30 June 2003
Access level
metadata only access
Resource Type
conference paper
Author(s)
Tsuda M.
Watanabe K.
Kamiyama S.
Amano H.
Akasaki I.
Liu R.
Bell A.
Universidad del estado de Arizona
Publisher(s)
Elsevier
Abstract
Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.
Start page
585
End page
589
Volume
216
Issue
1-4 SPEC.
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Subjects
Scopus EID
2-s2.0-0038684455
Source
Applied Surface Science
ISSN of the container
01694332
Sources of information:
Directorio de Producción Científica
Scopus