Title
Structure of PECVD Si:H films for solar cell applications
Date Issued
15 May 2003
Access level
metadata only access
Resource Type
journal article
Author(s)
Edelman F.
Chack A.
Weil R.
Beserman R.
Khait Y.L.
Werner P.
Roschek T.
Carius R.
Wagner H.
Beyer W.
Forschungszentrum Juelich
Abstract
The structure of undoped SiH films and solar cells deposited under different hydrogen concentration and substrate temperatures were studied. The characterization techniques used were XRD, Raman spectroscopy, TEM, optical absorption, and hydrogen effusion. The high concentration films were amorphous in the as-deposited state but crystallized upon annealing at 700°C. Middle and low concentration films were nanocrystalline (nc) and remained nc up to 800°C annealing. A theoretical explanation is given for the stability of these films. Such films, on glass substrates, had optical absorption spectra close to those of amorphous material. The solar cell samples, showed some nc morphology in all-concentration states. © 2002 Elsevier Science B.V. All rights reserved.
Start page
125
End page
143
Volume
77
Issue
2
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-0037448125
Source
Solar Energy Materials and Solar Cells
ISSN of the container
09270248
Sponsor(s)
The authors would like to thank Mrs. Sigrid Höpfe (MPI, Halle) for cross-sectional TEM samples preparation This research was supported in part by a grant from the National Council for Research and Development, Israel, and by the Bundesministerium für Bildung, Wissenschaft, Forschung und Technology (BMBF) Germany. We also acknowledge the support of the Israel Ministry of Absorption.
Sources of information:
Directorio de Producción Científica
Scopus