Title
High-quality III-V nitrides grown by metalorganic chemical vapor deposition
Date Issued
01 January 1996
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Materials Research Society
Abstract
We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘapprox. 37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.
Start page
183
End page
188
Volume
395
Language
English
OCDE Knowledge area
Electroquímica
Scopus EID
2-s2.0-0029746611
ISSN of the container
02729172
Conference
Materials Research Society Symposium - Proceedings
Sources of information:
Directorio de Producción Científica
Scopus