Title
Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)
Date Issued
28 April 2003
Access level
metadata only access
Resource Type
journal article
Author(s)
Hu C.W.
Bell A.
Shi L.
PONCE ANTUNEZ DE MAYOLO, FERNANDO AGUSTIN
Smith D.J.
Tsong I.S.T.
Universidad del estado de Arizona
Abstract
Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001) surfaces via the vapor-liquid-vapor (VLS) mechanism were investigated. The microstructure of GaN islands was studied by high-resolution cross-sectional transmission electron microscopy, morphology by atomic force microscopy, and assembly of islands by scanning electron microscopy. Micro-Raman spectroscopy results showed the existence of tensile strain in the GaN islands.
Start page
2889
End page
2891
Volume
82
Issue
17
Language
English
OCDE Knowledge area
Óptica
DOI
10.1063/1.1570000
Scopus EID
2-s2.0-0037959789
Source
Applied Physics Letters
ISSN of the container
00036951
Sources of information: Directorio de Producción Científica Scopus