Title
Graphene as thin film infrared optoelectronic sensor
Date Issued
31 December 2009
Access level
metadata only access
Resource Type
conference paper
Author(s)
Hwang G.
Acosta J.C.
Haliyo S.
Régnier S.
Universidad Pierre y Marie Curie
Abstract
We present the conductometric behavior of a single atomic carbon nanostructure (graphene) that could be promising to infrared optoelectronic applications. A graphene nanomanipulation system with focused infrared laser source for optoelectronic property characterizations is implemented. The feasibility of mechanical and electrical probing manipulations on two-dimensional thin film nanostructures is studied. Using this system, we revealed the infrared optoelectronic properties of mono- and multilayer graphene. The obtained optoelectronic parameters are compared to the single- and multi-walled nanotubes. A graphene infrared sensor is prototyped by direct writing of electrodes using gold nanoink fountain-pen method and is analyzed by electrical probing. Results show that graphene could be a promising building block for thin film optoelectronic devices. © 2009 IEEE.
Start page
169
End page
174
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica
Scopus EID
2-s2.0-72749106104
ISBN
9781424442102
Conference
ISOT 2009 - International Symposium on Optomechatronic Technologies
Sources of information: Directorio de Producción Científica Scopus