In this work, the authors present a study of the resistive switching effect (RS) in Co0.2TiO3.2 (CTO) in a thin film structure Pt/CTO/ITO. The identification of a structure of low crystallinity with different deposition times is seen in the diffractograms with a certain tendency of orientation in the plane (311) of the inverted spinel of space group Fd-3m. Electrical measurements I–V highlight the appearance of RS effect predominated by unipolar filamentary mechanism. The retention of charge in the device shows good stability and separation of HRS-LRS states with ROFF/RON ≈106 ratio. The authors are able to demonstrate that Co0.2TiO3.2 presents promising performance for application in non-volatile memories.