Title
Silicon nanowires as electron field emitters
Date Issued
01 January 2017
Access level
metadata only access
Resource Type
book part
Author(s)
Varshney D.
Weiner B.R.
Morell G.
University of Puerto Rico
Abstract
Silicon nanomaterials are also popular since they can be synthesized on a large scale and inexpensively by several methods, and in various morphologies including silicon nanowires (SiNWs), nanorods, nanobelts, and nanoparticles. Quasi-one-dimensional (1D) SiNW semiconductors have attracted much attention because of their distinctive optical, electronic, and mechanical properties, suitable for modern applications in electron field emission due to their high electron mobility. Recently, there has been an increase in applications of quasi-1D SiNWs due to their compatibility with existing semiconductor technology, evidenced by the successful incorporation of SiNWs in field-effect transistors and in UHD full-color flat panel displays. This chapter shows that bare SiNWs possess good Electron Field Emitters (EFE) properties; nevertheless they can be significantly enhanced by growing ultrananocrystalline diamond (UNCD) on the SiNWs. The SiNWs were coated with UNCD by using a hot filament chemical vapor deposition (HF-CVD) process.
Start page
435
End page
454
Language
English
OCDE Knowledge area
FĂ­sica atĂ³mica, molecular y quĂ­mica
Scopus EID
2-s2.0-85133080180
ISBN
9781498763875 9781498763776
Resource of which it is part
Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One
Sources of information: Directorio de ProducciĂ³n CientĂ­fica Scopus