Title
Single-photon emission from InGaAs quantum dots grown on (111) GaAs
Date Issued
19 March 2010
Access level
metadata only access
Resource Type
journal article
Author(s)
Stock E.
Warming T.
Ostapenko I.
Rodt S.
Schliwa A.
Lochmann A.
Toropov A.
Moshchenko S.
Dmitriev D.
Haisler V.
Bimberg D.
Abstract
In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40 μeV down to the determination limit of our setup (10 μeV) was observed. © 2010 American Institute of Physics.
Volume
96
Issue
9
Language
English
OCDE Knowledge area
Física y Astronomía
Scopus EID
2-s2.0-77949348030
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
This work was supported by Deutsche Forschungsgemeinschaft in the frame of SFB 787.
Sources of information:
Directorio de Producción Científica
Scopus