Title
GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen
Date Issued
01 February 2010
Access level
metadata only access
Resource Type
journal article
Author(s)
Pagels M.
Reinhardt F.
Pollakowski B.
Roczen M.
Becker C.
Lips K.
Kanngießer B.
Beckhoff B.
Helmholtz-Zentrum Berlin für Materialien und Energie
Abstract
GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing. © 2009 Elsevier B.V. All rights reserved.
Start page
370
End page
373
Volume
268
Issue
April 3
Language
English
OCDE Knowledge area
Óptica
Recubrimiento, Películas
Subjects
Scopus EID
2-s2.0-76049110298
Source
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ISSN of the container
0168583X
Sources of information:
Directorio de Producción Científica
Scopus