Title
Effect of temperature on impedance behavior of insulation layer in a HTS MEMS switch for RF applications
Date Issued
01 June 2005
Access level
metadata only access
Resource Type
conference paper
Author(s)
Hijazi Y.
Bogozi A.
Brzhezinskaya M.
Martinez J.
Burke J.
Vlassov Y.
Larkins G.
Universidad Internacional de Florida
Abstract
We have successfully developed High Temperature Superconducting (HTS) MicroElectroMechanical (MEM) switches for RF applications. A typical switch is composed of a superconducting Yttrium Barium Copper Oxide (YBa 2Cu3O7) coplanar waveguide structure with a gold bridge membrane suspended above an area of the center conductor covered with Barium Titinate (BaTiO3) ferroelectric. A control voltage applied between the membrane and transmission line causes the membrane to collapse on top of the dielectric layer by electrostatically induced force; this in turn allows the RF signal to capacitively shunt to ground. Initial testing of switches showed very promising RF behavior with insertion losses less than 0.1 dB with 30 dB isolation at 3 GHz. These switches rely on the "ON/OFF" impedance ratio to achieve switching; this is determined by the dielectric constant of the BaTiO3 ferroelectric. These switches will be operated at cryogenic temperatures; we have investigated the impedance behavior vs. temperature of the HTS/ferroelectric/metal heterostructure to better understand the behavior of the insulating layer at cryogenic temperatures. © 2005 IEEE.
Start page
952
End page
955
Volume
15
Issue
2 PART I
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica
Scopus EID
2-s2.0-22044445268
Source
IEEE Transactions on Applied Superconductivity
ISSN of the container
10518223
Source funding
Air Force Office of Scientific Research
Sponsor(s)
Manuscript received October 4, 2004. This work was supported by the U.S. Air Force Office of Scientific Research under Grant F49620-02-1-0044.
Sources of information: Directorio de Producción Científica Scopus