Title
Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography
Date Issued
29 January 2007
Access level
open access
Resource Type
journal article
Author(s)
Abstract
Electron holography has been used to study the properties of a nominally undoped AlGaNAlNGaN heterostructures. Important characteristics such as the electrostatic potential and the two-dimensional electron gas (2DEG) distribution have been determined with high spatial resolution across the thin film structure. The origin of 2DEG electrons is directly probed by analyzing the charge distribution in the AlGaN layer. It is shown that the contribution of residual donors is trivial and the ionized donorlike surface states are the major source of the 2DEG electrons. © 2007 American Institute of Physics.
Volume
90
Issue
3
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Scopus EID
2-s2.0-33846413900
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
Research at ASU was supported by a grant from Nichia Corporation. The authors at ASU acknowledge use of facilities in the Center for High Resolution Electron Microscopy at ASU. The authors at Georgia Tech acknowledge DARPA/MTO for support of this work under the Wide Bandgap Electronics Program, Contract No. FA9550-04-1-0415 (M. Rosker and G. Witt). One of the authors (R.D.D.) gratefully acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.
Sources of information:
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