Title
Quality control and electrical properties of thin amorphous (SiC) 1-x(AlN)x films produced by radio frequency dual magnetron sputtering
Date Issued
01 January 2010
Access level
metadata only access
Resource Type
conference paper
Author(s)
Erlenbach O.
Torres J.A.G.
Hupfer T.
Steidl M.
Winnacker A.
Publisher(s)
Trans Tech Publications Ltd
Abstract
Amorphous pseudobinary (SiC)1-x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN targets. For each target the emission characteristic, i.e. the spatial variation of the deposition rate was determined, in order to predict thickness distribution and spatial composition variation for the (SiC)-(AlN) alloy. Impedance spectroscopy shows a high resistivity of the films in the SiC rich region, decreasing significantly towards the AlN rich region. © (2010) Trans Tech Publications.
Start page
1199
End page
1202
Volume
645-648
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Subjects
Scopus EID
2-s2.0-77955453179
Source
Materials Science Forum
Resource of which it is part
Materials Science Forum
ISSN of the container
02555476
ISBN of the container
0878492798
Conference
13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Sources of information:
Directorio de Producción Científica
Scopus