Title
Plastic hardening in cubic semiconductors by nanoscratching
Date Issued
01 January 2011
Access level
metadata only access
Resource Type
journal article
Author(s)
Caldas P.
Prioli R.
Almeida C.
Huang J.
Abstract
The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along {110} and {100} crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than ∼80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes. © 2011 American Institute of Physics.
Volume
109
Issue
1
Language
English
OCDE Knowledge area
Física de partículas, Campos de la Física
Scopus EID
2-s2.0-78751520425
Source
Journal of Applied Physics
ISSN of the container
00218979
Sponsor(s)
This work was partially supported by the Brazilian Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) and the Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ). Research at Arizona State University was supported by a gift from Nichia Corporation.
Sources of information: Directorio de Producción Científica Scopus