The incorporation behavior of the boron and nitrogen during vapor growth (PVT) of 6H-SiC bulk crystals has been studied using chemical analysis and temperature-dependent Hall effect measurements. Nominally undoped crystals show a exponential decrease in charge carrier concentration because of nitrogen depletion in the growth system. Boron incorporation is dependent on the B content in the source over a wide range of B starting concentration. The B source depletes only slowly during growth, leading to a constant B concentration NA in the crystals. Numerical simulation shows that for low compensation (NA/Ncomp ≥ 5) the charge carrier concentration at room temperature behaves like p ∼ NA/N comp, whereas for high compensation a relation of p ∼ N A-Ncomp was found. Evaluating temperature-dependent Hall effect measurements for SiC crystals doped with various amounts of B, N A remains constant during growth, while Ncomp decreases from Ncomp = 2 × 1018 to 2 × 1017 cm-3 as observed in nominally undoped crystals. As a result, the charge carrier concentration of B doped samples increases exponentially with growth time even though NA-Ncomp roughly remains constant. Finally, a decrease in the charge carrier concentration around faceted areas observed in p-type SiC growth is found to be related to the terrace width of macrosteps on the growth surface. © 2002 Trans Tech Publications.