Title
Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
Date Issued
22 March 2001
Access level
metadata only access
Resource Type
journal article
Author(s)
Bickermann M.
Bushevoy S.
Hofmann D.
Rasp M.
Straubinger T.
Wellmann P.
Winnacker A.
University of Erlangen
Publisher(s)
Elsevier BV
Abstract
An optical characterization method for determination of spatial doping level concentration in n-type 4H-SiC and p-type 6H-SiC is discussed. The absorption bands of free charge carriers at 460 nm in n-type 4H-SiC are used to determine its doping concentration. In p-type 6H-SiC, the band edge related absorption at 410 nm is a measure for the doping concentration. In both cases, Hall measurements are performed for calibration. Various examples of SiC-wafer mappings are shown and the relationships to crystal growth conditions, i.e. control of doping level and distribution, are investigated. © 2001 Elsevier Science S.A.
Start page
357
End page
361
Volume
80
Issue
March 1
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-0035932275
Source
Materials Science and Engineering: B
ISSN of the container
09215107
Sponsor(s)
Funding text
This work has been supported by the Deutsche Forschungsgemeinschaft (project Wi393/9) and the Bayerische Forschungsstiftung (project 176/96).
Sources of information:
Directorio de Producción Científica
Scopus