In this work we report on a simple process for the fabrication of hollow core ARROW (Anti-Resonant Reflecting Optical Waveguide) waveguides using low temperatures (100 ° C). These temperatures allow the use of conventional positive photoresist as sacrificial layer, since higher temperatures make the removal of the photoresist, after the deposition takes place, impossible. Two different silicon oxynitride materials (SiOxNy) were used as top anti-resonant layers for the ARROW waveguides: a film with a composition close to silicon dioxide (SiO2) and one close to silicon nitride (Si3N4). Both films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), using N2O, N2 and SiH4 gaseous mixtures. In order to use these films as cladding layers, a study of its composition and optical properties was realized. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.