Title
Improved gas response at room temperature of activated nanocrystalline WO<inf>3</inf> films
Date Issued
01 December 2004
Access level
metadata only access
Resource Type
conference paper
Author(s)
Saukko S.
Hoel A.
Lantto V.
Granqvist C.
Lappalainen J.
University of Oulu
Abstract
Advanced reactive gas deposition was used to produce pure and Auactivated nanocrystalline WO3 films for gas-sensing studies. Many different methods - such as X-ray diffraction, X-ray photoelectron spectroscopy, energy dispersive spectroscopy, scanning electron microscopy, and atomic force microscopy - were used to characterize structural properties of the films. The WO3 particles in the films had the high-temperature tetragonal crystal structure after deposition, and the average crystallite size was about 10nm. The effect of sintering on structural, electrical, and gassensing properties of both pure and Au-activated WO3 films was also studied. Gas response experiments with films on alumina substrate were done at different operation temperatures, from room temperature up to about 450°C, at exposure to different concentrations of H2S and H2 in dry synthetic air. © Physica Scripta 2004.
Start page
240
End page
243
Volume
T114
Language
English
OCDE Knowledge area
Física atómica, molecular y química Ingeniería eléctrica, Ingeniería electrónica
Scopus EID
2-s2.0-39549095789
Source
Physica Scripta T
ISSN of the container
02811847
Conference
20th Nordic Semiconductor Meeting, NSM20
Sources of information: Directorio de Producción Científica Scopus