Title
Performance improvement of InGaN-based laser diodes by epitaxial layer structure design
Date Issued
07 May 2010
Access level
metadata only access
Resource Type
conference paper
Author(s)
Liu J.
Zhang Y.
Lochner Z.
Kim S.S.
Kim H.
Ryou J.H.
Shen S.C.
Yoder P.D.
Dupuis R.D.
Wei Q.
Sun K.
Fischer A.
Abstract
Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Volume
7602
Language
English
OCDE Knowledge area
Química física
Subjects
Scopus EID
2-s2.0-77951744169
ISSN of the container
0277786X
ISBN of the container
978-081947998-3
Conference
Proceedings of SPIE - The International Society for Optical Engineering
Sources of information:
Directorio de Producción Científica
Scopus