Title
Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
Date Issued
01 January 2017
Access level
metadata only access
Resource Type
conference paper
Author(s)
Williams J.J.
McFavilen H.
Fischer A.M.
Ding D.
Young S.R.
Vadiee E.
Arena C.
Honsberg C.B.
Goodnick S.M.
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
Start page
604
End page
607
Language
English
OCDE Knowledge area
Química física
Scopus EID
2-s2.0-85048472189
ISBN
9781509056057
ISBN of the container
978-150905605-7
Conference
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Sponsor(s)
The information, data, and work presented here was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470.
Sources of information:
Directorio de Producción Científica
Scopus