Title
Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells
Date Issued
01 June 2009
Access level
metadata only access
Resource Type
journal article
Author(s)
Becker C.
Conrad E.
Dogan P.
Fenske F.
Gorka B.
Hänel T.
Lee K.
Rau B.
Ruske F.
Weber T.
Berginski M.
Hüpkes J.
Gall S.
Helmholtz-Zentrum Berlin für Materialien und Energie
Abstract
The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 Ω after 22 h annealing at 600 °C and only slightly increases for a 200 s heat treatment at 900 °C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 °C. © 2008 Elsevier B.V. All rights reserved.
Start page
855
End page
858
Volume
93
Issue
July 6
Language
English
OCDE Knowledge area
Óptica
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-67349112391
Source
Solar Energy Materials and Solar Cells
ISSN of the container
09270248
Sponsor(s)
The authors would like to thank S. Common, K. Jacob, C. Klimm, M. Muske and A. Scheu from HMI for their assistance during sample preparation and characterization. This work has been supported by the FP6 research project ATHLET of the European Commission (Contract no. 019670-FP6-IST-IP) and the BMU project (Contract no. 0327581).
Sources of information:
Directorio de Producción Científica
Scopus