Title
Direct imaging of impurity-induced Raman scattering in GaN
Date Issued
01 January 1997
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Materials Research Society
Abstract
Raman scattering experiments on silicon-doped GaN show that donor impurities quench the A1(LO) Raman line at 735 cm-1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the A1(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.
Start page
731
End page
736
Volume
449
Language
English
OCDE Knowledge area
Física de partículas, Campos de la Física
Scopus EID
2-s2.0-0030685559
ISSN of the container
02729172
Conference
Materials Research Society Symposium - Proceedings
Sources of information:
Directorio de Producción Científica
Scopus