Title
Structural and optical characterization of nonpolar GaN/AlN quantum wells
Date Issued
28 July 2003
Access level
metadata only access
Resource Type
journal article
Author(s)
Ng H.
Bell A.
PONCE ANTUNEZ DE MAYOLO, FERNANDO AGUSTIN
Chu S.
Universidad del estado de Arizona
Abstract
Structural and optical characterization of nonpolar GaN/AlN quantum wells were presented. Multiple quantum wells were grown by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction results showed that the 18-Å GaN quantum wells exhibited luminescence at 326 nm.
Start page
653
End page
655
Volume
83
Issue
4
Language
English
OCDE Knowledge area
Óptica
DOI
10.1063/1.1595154
Scopus EID
2-s2.0-0042513832
Source
Applied Physics Letters
ISSN of the container
00036951
Sources of information: Directorio de Producción Científica Scopus