Title
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO<inf>2</inf>/SiO<inf>2</inf> dielectric mirrors
Date Issued
18 November 2013
Access level
metadata only access
Resource Type
journal article
Author(s)
Kao T.T.
Liu Y.S.
Mahbub Satter M.
Li X.H.
Lochner Z.
Douglas Yoder P.
Detchprohm T.
Dupuis R.D.
Shen S.C.
Ryou J.H.
Fischer A.M.
Wei Y.
Xie H.
Abstract
We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an AlxGa1-xN-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm2. After employing high-reflectivity SiO2/HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm2. The internal loss and threshold modal gain can be calculated as 2 cm-1 and 10.9 cm -1, respectively. © 2013 AIP Publishing LLC.
Volume
103
Issue
21
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Scopus EID
2-s2.0-84888417187
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
This work was supported by the Defense Advanced Research Projects Agency under Contract No. FA2386-10-1-4152. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.
Sources of information:
Directorio de Producción Científica
Scopus