Title
Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
Date Issued
12 February 2014
Access level
metadata only access
Resource Type
conference paper
Author(s)
Nokia Corporation
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.
Issue
7041886
Language
English
OCDE Knowledge area
Ingeniería de sistemas y comunicaciones
Subjects
Scopus EID
2-s2.0-84946688468
Resource of which it is part
2014 IEEE Latin-America Conference on Communications, IEEE LATINCOM 2014
ISBN of the container
978-147997162-6
Conference
6th IEEE Latin-America Conference on Communications, IEEE LATINCOM 2014 Cartagena de Indias 5 November 2014 through 7 November 2014
Sources of information:
Directorio de Producción Científica
Scopus